The NGD8201  Insulated Gate Bipolar Transistor (IGBT), primarily engineered for high-voltage and high-current automotive applications. it is commonly found in vehicle ignition systems and direct fuel injection drivers. Collector-Emitter Voltage (): 400 V to 440 V.Collector Current (): 20 A (Continuous) / 50 A (Pulsed).Saturation Voltage (): ≤ 1.3 V @ 10 A.Power Dissipation (): 125 W.